Projection optical system, exposure apparatus, and exposure method

ABSTRACT

A projection optical system is a catoptric system in which a field of view region and an imaging region are located spaced from an optical axis, in which a numerical aperture of light reaching each point on an image plane is substantially uniform regardless of an image height and a direction. An aperture stop for defining the numerical aperture of the projection optical system is provided, and the aperture stop is provided with an aperture portion in a predetermined shape in which the numerical aperture of light reaching each point within a predetermined region is substantially uniform over the predetermined region, that is, in a shape in which dimensions concerning two directions perpendicular to each other are different from each other. A predetermined shape of the aperture portion is defined so as to compensate for the effect of non-uniformity of the numerical aperture of light reaching each point within a predetermined region due to a partial optical system arranged between the aperture stop and an image plane not satisfying a desired projective relationship.

This is a Continuation of application Ser. No. 11/158,096 filed Jun. 22,2005, which claims the benefit of U.S. Provisional Application No.60/691,239 filed Jun. 17, 2005. The disclosure of each of the priorapplications is hereby incorporated by reference herein in its entirety.

BACKGROUND OF THE INVENTION

This invention relates to a projection optical system, an exposureapparatus, and an exposure method. More specifically, this inventionrelates to a projection optical system that is preferably used in anexposure apparatus that manufactures devices such as a semiconductorelement, using EUV light, in a photolithographic process.

Conventionally, in an exposure apparatus used in manufacturing asemiconductor element or the like, a circuit pattern formed on a mask(reticle) is projected and transferred onto a photosensitive substrate(for example, a wafer) via a projection optical system. A resist iscoated on the photosensitive substrate, the resist is photosensitized byprojection exposure via the projection optical system, and a resistpattern corresponding to a mask pattern is obtained.

Here, resolution W of an exposure apparatus depends on a wavelength λ ofexposure light and a numerical aperture NA of the projection opticalsystem and is shown by the following equation (a).W=k·λ/NA(k:constant)  (a)

Therefore, in order to improve the resolution of the exposure apparatus,the wavelength λ of the exposure light is shortened, and the numericalaperture NA of the projection optical system needs to be increased. Ingeneral, increasing the numerical aperture NA of the projection opticalsystem to a predetermined value or more is difficult from a perspectiveof optical design, so exposure light needs to have a shorter wavelength.

Therefore, as an exposure method (exposure apparatus) for the nextgeneration of semiconductor patterning, an EUVL (Extreme Ultra VioletLithography) method has been focused upon. In the EUVL exposureapparatus, compared to a conventional exposure method using a KrFexcimer laser beam in which the wavelength is 248 nm and an ArF excimerlaser beam in which the wavelength is 193 nm, EUV (Extreme Ultra Violet)light having a wavelength of approximately 5-20 nm is used.

When EUV light is used as exposure light, an optically transmissivematerial that can be used does not exist. Because of this, in the EUVLexposure apparatus, a reflective type mask is naturally used, and areflective type projection optical system is used.

SUMMARY OF THE INVENTION

In general, in a reflective type projection optical system used for anEUVL exposure apparatus, a field of view region on an object plane andan imaging region on an image plane are not located on the optical axis.This is because optical path separation is performed so that areflective surface does not block a light beam to be transmitted.Meanwhile, in a Schwarzschild optical system, a field of view region andan imaging region are positioned on the optical axis, so light istransmitted via an aperture portion arranged in the center of a mirror.

In this case, the aperture of the optical system becomes an annularshape, and the resolution deteriorates for a specified spatialfrequency, so this is not suitable for lithography. In general, in aprojection optical system used for an EUVL exposure apparatus, as latermentioned, the numerical aperture of light reaching each point on theimage plane varies depending on the direction. A numerical aperture oflight reaching each point on the image plane being different dependingon the direction means that irregularities in resolution occur due tothe direction, and irregularities exist in a shape of a pattern formedon a photosensitive substrate via the projection optical system.

This invention reflects on the above-mentioned problem. An object ofthis invention is to provide a projection optical system that is acatoptric system in which a field of view region and an imaging regionare located spaced from the optical axis, and in which a numericalaperture of light reaching each point on an image plane is substantiallyuniform regardless of the direction.

Additionally, another object of this invention is to provide an exposureapparatus and an exposure method that can reliably form a mask patternon a photosensitive substrate at a large resolution, using a reflectivetype projection optical system in which a numerical aperture of lightreaching each point on an image plane is substantially uniformregardless of the direction, for example, using EUV light as exposurelight.

In order to address the above-mentioned problem, according to one aspectof this invention, a projection optical system, which is a reflectivetype, in which an image of a first plane is formed at a second plane ina predetermined region spaced from an optical axis, is provided with anaperture stop for defining a numerical aperture of the projectionoptical system, wherein the aperture stop is provided with an apertureportion in a predetermined shape in which a numerical aperture of lightreaching each point within a predetermined region is substantiallyuniform over the predetermined region regardless of the direction, thatis, in which dimensions in two directions perpendicular to each otherare different from each other.

According to another aspect of this invention, a projection opticalsystem, which is a reflective type, in which an image of a first planeis formed in a predetermined region spaced from an optical axis at asecond plane, is provided with an aperture stop for defining a numericalaperture of the projection optical system, wherein the aperture stop isconstituted so as to be replaceable with another aperture stop in adifferent aperture shape.

According to a third aspect of this invention, an exposure apparatus isprovided with an illumination system for illuminating a mask set at thefirst plane, and the projection optical system described in the first orsecond aspect for forming an image of a pattern formed on the mask ontoa photosensitive substrate set at the second plane.

According to a fourth aspect of this invention, an exposure method isprovided, and includes the steps of illuminating a mask set at the firstplane, and projecting and exposing an image of a pattern formed on themask onto a photosensitive substrate set at the second plane via theprojection optical system described in the first or second aspect.

According to a fifth aspect of this invention, a projection exposureapparatus includes an illumination optical system for illuminating amask set at a first plane, a reflective type projection optical systemfor forming an image of a pattern formed on the mask in an arc regionspaced from an optical axis on a photosensitive substrate set at asecond plane, and a stage for holding the wafer and the photosensitivesubstrate so as to be relatively scanned, wherein in the arc region, thewidth in the scan movement direction is relatively narrow with respectto a width in a direction perpendicular to the scan movement direction.In addition, the projection optical system is provided with an aperturestop for defining a numerical aperture, and in an aperture shape of theaperture stop, the diameter in a direction corresponding to the scanmovement direction is larger than the diameter in a directioncorresponding to a direction perpendicular to the scan movementdirection.

In a reflective type projection optical system of this invention, anaperture portion of the aperture stop is set to be a predetermined shape(for example, an elliptical shape) other than a round shape, sonon-uniformity can be minimized due to the direction of the numericalaperture of the light beam reaching each point on the image plane.

That is, this invention can provide a projection optical system that isa catoptric system in which the field of view region and the imagingregion are located spaced from the optical axis, in which the numericalaperture of the light reaching each point on the imaging plane issubstantially uniform regardless of the direction. Therefore, in theexposure apparatus of this invention, using a reflective type projectionoptical system in which the numerical aperture of the light reachingeach point on the image plane is substantially uniform regardless of thedirection, for example, using EUV light as exposure light, a maskpattern can be reliably formed on a photosensitive substrate at a largeresolution.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram explaining definitions of numerical apertures on andoff an optical axis, respectively.

FIG. 2 is a diagram explaining a sine condition of a broad definition tobe satisfied by a partial optical system, and a projective relationship.

FIG. 3 is a diagram schematically showing a structure of an exposureapparatus of an embodiment of this invention.

FIG. 4 is a diagram schematically showing a positional relationshipbetween an arc-shaped stationary exposure region formed on a wafer ofthe exposure apparatus of FIG. 3 and an optical axis.

FIG. 5 is a diagram schematically showing a state in which one shotregion is formed on a wafer by scanning exposure.

FIG. 6 is a diagram schematically showing a structure of a projectionoptical system of this embodiment.

FIG. 7 is a diagram schematically showing an aperture distortiondirection and a distortion state at each point of an imaging region whenan aperture portion is made to be a round shape according toconventional technology.

FIG. 8 is a diagram schematically showing an aperture distortiondirection and a distortion state at each point of an imaging region whenan aperture portion is made to be an elliptical shape according to thisinvention.

FIG. 9 is a diagram schematically showing an aperture stop having anelliptical aperture portion having a long diameter in a meridionaldirection.

FIG. 10 is a diagram showing a simulation result on effects given toimaging by aperture distortion.

FIG. 11 is a diagram explaining a preferred condition to be specificallysatisfied by an aperture portion of an aperture stop.

FIG. 12 is a diagram showing a flowchart with respect to one example ofa method of obtaining a semiconductor device as a microdevice.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The following specifically explains problems of conventional technologyprior to explaining embodiments of this invention. In a reflective typeprojection optical system in which a view of field region and an imagingregion are positioned apart from an optical axis, a numerical apertureon the optical axis cannot be defined with its usual meaning. Therefore,the numerical aperture NA off the optical axis is defined as shown inFIG. 1.

In FIG. 1, a numerical aperture NAo on an optical axis is shown by thefollowing equation (1), using an angle that an outermost light beam(light beam reaching an image plane IP passing through a periphery of anaperture portion) reaching the image plane IP forms with an optical axisAX, that is, incident angle θ. Meanwhile, a numerical aperture NA offthe optical axis is defined by the following equation (2), usingincident angles θ1 and θ2 of the outermost light beams reaching theimage plane IP.NAo=sin θ  (1)NA=(sin θ1−sin θ2)/2  (2)

The definition of the numerical aperture NA off the optical axis isnaturally introduced by a sine condition off the optical axis. A sinecondition off an optical axis can be shown in “No. 4: Light Pencil”authored by Tadao Tsuruta and published by Shin-Gijyutsu Communications,P. 433, etc. In general, in a projection optical system, the numericalaperture NA off the optical axis is different from NAo on the opticalaxis. Furthermore, an aperture portion is a round shape, so thenumerical aperture NA off the optical axis in a meridional direction isdifferent from the numerical aperture NA off the optical axis in asagittal direction. This phenomenon occurs due to various reasons.

First, a condition is considered in which NAo on the optical axis isidentical to the numerical aperture NA off the optical axis. At leastwhen the optical system satisfies the following three conditions, thenumerical aperture NA of the light reaching each point on the imageplane is uniform regardless of the imaging position and the direction.

(1) An optical system is substantially stigmatic

(2) In a partial optical system arranged between the aperture stop andthe image plane, a sine condition in a broad definition is established.That is, as shown in FIG. 2, when the x direction angle of lightreaching an arbitrary image point on the image plane IP (x directionincident angle), with respect to a normal line to the image plane IP, isα, and the y direction angle (y direction incident angle) is β, an xdirection height ξ from an optical axis AX of light when the lightpasses through an aperture stop AS, and a y direction height ζ, areshown by ξ=A sin α+B, and ζ=A sin β+C, respectively. Here, A, B, and Care constants determined by each image point.

(3) In the partial optical system arranged between the aperture stop andthe image plane, the projective relationship shown by h=F sin θ issatisfied. That is, as shown in FIG. 2, when the light passes throughthe aperture stop AS, the angle formed by the principal ray with respectto the optical axis AX is defined as θ, and the height from the opticalaxis AX on the image plane IP of the principal ray is defined as h, andwhen a focal length of the above-mentioned partial optical system GR isF, the projective relationship shown by h=F sin θ is established.

In a projection optical system mounted to an exposure apparatus, thefirst condition in which an optical system is substantially stigmatic issatisfied. However, conditions other than the first condition,particularly, the third condition in which the partial optical system GRsatisfies a desired projective relationship often causes significanterrors. Hereafter, a case is considered in which the first and secondconditions in which the partial optical system GR satisfies a sinecondition in a broad definition are satisfied, but the third conditionis not satisfied. That is, a case is considered in which the projectiverelationship of the partial optical system GR is shown by h=F·g (θ),using a function g (θ) in which θ is a variable.

At this point, the numerical aperture NA off the optical axis, that is,a numerical aperture NAm in a meridional direction and a numericalaperture NAs in a sagittal direction of the light reaching each pointother than the optical axis on the image plane are shown by thefollowing equations (3) and (4), respectively, using the numericalaperture NAo on the optical axis.NAm=NAo·cos θ/(dg(θ)/dθ)  (3)NAs=NAo·sin θ/g(θ)  (4)

In equations (3) and (4), if g (θ)=sin θ, NAm=NAs=NAo. It is clear thatthe numerical aperture NA of the light reaching each point on the imageplane becomes uniform regardless of the image height and the direction.In general, g (θ)≠sin θ, so the numerical aperture NA of the lightreaching each point on the image plane does not become uniform. Here, ifthe projective relationship departs from g (θ)=sin θ, the specific wayit departs is considered.

In reality, in a projection optical system mounted to an exposureapparatus as well, the main component of aberration is third orderaberration. Thus, if only the third order aberration component isconsidered, function g (θ) can be shown by the following equation (5).Here, δ is a constant showing an amount out of F sin θ of the projectiverelationship provided by the optical system.g(θ)=sin θ+δ·sin 3θ  (5)

If function g (θ) shown by equation (5) is substituted for theabove-mentioned equations (3) and (4), the numerical aperture NAm in themeridional direction and the numerical aperture NAs in the sagittaldirection are shown by the following equations (6) and (7),respectively.NAm=NAo/(1+3δ·sin 2θ)  (6)NAs=NAo/(1+δ·sin 2θ)  (7)

According to equations (6) and (7), the numerical aperture NA of thelight reaching each point on the image plane varies depending on theimage height (depending on θ), and if the error amount from thenumerical aperture NAo on the optical axis in the sagittal direction is1, the error amount in the meridional direction is 3. Thus, in general,in a projection optical system, the numerical aperture NA of the lightreaching each point on the image plane varies depending on the imageheight and the direction. Meanwhile, as mentioned before, the resolutionof the projection optical system is proportional to λ/NA (λ is awavelength of light that is used).

Therefore, variance of the numerical aperture NA of the light dependingon the image height and the direction means existence of irregularitiesin the resolution of the projection optical system due to the direction.If there are irregularities in the resolution of the projection opticalsystem due to the direction, the shape of a micro pattern that is formedwhen a semiconductor circuit is exposed changes depending on thedirection. As a result, a capacitor or a transistor to be ultimatelymanufactured does not have a predetermined electrical characteristic(conductance, impedance, etc.) intended by an electric circuit designer,and in the worst case, an integrated circuit is defective.

The most optically desired method to handle the above-mentioned problemis to design an optical system that satisfies all of the above-mentionedfirst through third conditions. However, although designing an opticalsystem that satisfies all of the first through third conditions istheoretically possible, but it is not actually feasible because ofcomplexity of a mirror structure, the increasing number of mirrors,significant increase of assembly precision that is needed, andsignificant cost increase. In particular, in EUVL exposure apparatus,the increasing number of reflective mirrors deteriorates the exposuredose because the reflection efficiency of the mirrors is not very high,and the product value also deteriorates.

The inventors of this application obtained a technical concept in whicha numerical aperture NA of light reaching each point on an image planecan be substantially uniform regardless of the direction by setting ashape of an aperture portion of an aperture stop defining a numericalaperture of a projection optical system in a predetermined shape (forexample, an elliptical shape) instead of a normal round shape. Thefollowing explains a specific content of the technical concept of thisinvention with reference to embodiments of this invention.

Embodiments of this invention are explained based on the attacheddrawings.

FIG. 3 is a diagram schematically showing a structure of an exposureapparatus according to embodiments of this invention. Furthermore, FIG.4 is a diagram showing a positional relationship between an arc-shapedstationary exposure region (that is, effective exposure region) formedon a wafer in the exposure apparatus of FIG. 3 and an optical axis. InFIG. 3, a Z axis extends along a line direction normal to a wafer W thatis a photosensitive substrate, a Y axis extends in a direction parallelto a paper plane of FIG. 3 within a plane of the wafer W, and an X axisextends in a direction perpendicular to the paper plane of FIG. 3 withinthe plane of the wafer W.

In FIG. 3, the exposure apparatus of this embodiment is provided with,for example, a laser plasma light source 1 as a light source to supplyexposure light. The light exited from the light source 1 enters anillumination optical system 3 via a wavelength selection filter 2. Here,the wavelength selection filter 2 has a characteristic that istransmitting only EUV light (X-ray) of a predetermined wavelength (forexample, 13.5 nm) from the light supplied by the light source 1 andpreventing transmitting of other wavelength light.

The EUV light that passed through the wavelength selection filter 2illuminates a reflective type mask M in which a pattern to betransferred is formed via the illumination optical system 3 constitutedby a plurality of reflective mirrors. The mask M is held by a mask stageMS movable along the Y direction so that the pattern surface extendsalong an XY plane. Additionally, movement of the mask stage MS iscontrolled based on measurements made by an undepicted laserinterferometer. Thus, on the mask M, an arc-shaped illumination region(field of view region) is formed, which is symmetrical with respect tothe Y axis.

The light from the pattern of the illuminated mask M forms an image of amask pattern on the wafer W, which is a photosensitive substrate, via areflective type projection optical system PL. That is, on the wafer W,as shown in FIG. 4, an arc-shaped stationary exposure region (effectiveexposure region: imaging region) ER is formed, which is symmetrical withrespect to the Y axis. In FIG. 4, within an arc-shaped region (imagecircle) IF having a radius φ about an optical axis AX, the arc-shapedstationary exposure region ER is arranged in which the length in the Xdirection is LX and the length in the Y direction is LY so as to betangent to the image circle IF.

The wafer W is held by a wafer stage WS that is two-dimensionallymovable along the X and Y directions so that the exposure surfaceextends along the XY plane. Furthermore, in the same manner as the maskstage MS, movement of the wafer stage WS is controlled based onmeasurements made by an undepicted laser interferometer. Thus, while themask stage MS and the wafer stage WS are moved along the Y direction,that is, while the mask M and the wafer W are relatively moved along theY direction with respect to the projection optical system PL, scanningexposure is performed. Thus, a pattern of the mask M is transferred ontoone shot region (exposure region) on the wafer W.

In FIG. 5, the length of one shot region SR in the X directioncorresponds to the length LX in the X direction of the stationaryexposure region ER, and the length in the Y direction corresponds to thelength LYo depending on the moving distance of the wafer W. Furthermore,when the projection magnification (transfer magnification) of theprojection optical system PL is ¼, the moving velocity of the waferstage WS is set at ¼ of the moving velocity of the mask stage MS, andsynchronous scanning is performed. Furthermore, by repeating the stepmovement of the wafer stage WS along the X direction and the scanmovement along the Y direction, a pattern of the mask M is consecutivelytransferred onto each shot region of the wafer W.

FIG. 6 is a diagram schematically showing a structure of a projectionoptical system according to this embodiment. In FIG. 6, the projectionoptical system PL of this embodiment is constituted by a firstreflective imaging optical system G1 to form an intermediate image of apattern of the mask M and a second reflective imaging optical system G2to form an image of the intermediate image of the mask pattern(secondary image of the pattern of the mask M).

The first reflective imaging optical system G1 is constituted by fourreflective mirrors M1-M4. The second reflective imaging optical systemG2 is constituted by two reflective mirrors M5 and M6. Furthermore, theprojection optical system PL is an optical system that is telecentricwith respect to a wafer side (imaging side). In addition, reflectivesurfaces of all the reflective mirrors M1-M6 are formed in an asphericalshape that is rotationally symmetrical with respect to the optical axis,and an aperture stop AS is arranged on an optical path from the firstreflective mirror M1 to the second reflective mirror M2.

Furthermore, when the height in the direction perpendicular to theoptical axis is y, the distance (sag amount) along the optical axis to aposition on the aspherical surface at a height y from the tangentialplane on the vertex of the aspherical surface is z, a vertex radius ofcurvature is r, a conical coefficient is κ, and an n-order asphericalcoefficient is Cn, the aspherical surface is shown by the followingequation (b).z=(y2/r)/[1+{1−(1+κ)·y2/r2}½]+C4·y4+C6·y6+C8·y8+C10·y10+  (b)

In the projection optical system PL of this embodiment, after the lightfrom the mask M (undepicted in FIG. 6) is reflected by a reflectivesurface of a first concave surface reflective mirror M1, a reflectivesurface of a second concave surface reflective mirror M2, a reflectivesurface of a third convex surface reflective mirror M3, and a reflectivesurface of a fourth concave surface reflective mirror M4 in order, anintermediate image of the mask pattern is formed. Furthermore, after thelight from the intermediate image of the mask pattern formed via thefirst reflective imaging optical system G1 is reflected by thereflective surfaces of the fifth convex surface reflective mirror M5 andthe sixth concave surface reflective mirror M6 in order, a reduced image(secondary image) of the mask pattern is formed on the wafer W.

The following Table (1) shows values of the projection optical system PLaccording to this embodiment. In Table (1), λ shows a wavelength ofexposure light (EUV light), β shows a projection magnification, NA showsa numerical aperture on an image side (wafer side), HO shows a maximumobject height on the mask M, φ shows a radius (maximum image height) ofthe image circle IF on the wafer W, LX shows a dimension of thestationary exposure region ER along the X direction, and LY shows adimension of the stationary exposure region ER along the Y direction.

Additionally, the surface number shows a sequence of the reflectivesurface from the mask side along the direction in which the light movesto the wafer surface, which is an image plane, from the mask surface,which is an object surface; r shows a vertex radius of curvature (mm) ofeach reflective surface, and d shows an interval of each reflectivesurface on the axis, that is, the surface interval (mm). Additionally,the surface interval d changes the sign every time the light isreflected. In addition, regardless of the direction in which the lightenters, a radius of curvature of a convex surface toward the mask sideis positive, and a radius of curvature of a concave surface is negative.TABLE (1) (Main Information) λ = 13.5 nm β = ¼ NA = 0.26 H0 = 124 mm φ =31 mm LX = 26 mm LY = 2 mm (Optical Member Information) Surface Number rd (Mask Surface) 652.352419 1 −790.73406 −209.979693 (First reflectivemirror M1) 2 ∞ −141.211064 (Aperture stop AS) 3 3000.00000 262.342040(Second reflective mirror M2) 4 478.68563 −262.292922 (Third reflectivemirror M3) 5 571.53754 842.912526 (Fourth reflective mirror M4) 6296.70332 −391.770887 (Fifth reflective mirror M5) 7 471.35911436.582453 (Sixth reflective mirror M6) (Wafer Surface) (Asphericaldata) First surface κ = 0.000000 C4 = 0.246505 × 10⁻⁸ C6 = −0.446668 ×10⁻¹³ C8 = 0.120146 × 10⁻¹⁷ C10 = −0.594987 × 10⁻²² C12 = 0.340020 ×10⁻²⁶ C14 = 0.254558 × 10⁻³⁰ C16 = −0.806173 × 10⁻³⁴ C18 = 0.686431 ×10⁻³⁸ C20 = −0.209184 × 10⁻⁴² Third Surface κ = 0.000000 C4 = −0.413181× 10⁻⁹ C6 = 0.717222 × 10⁻¹⁴ C8 = −0.713553 × 10⁻¹⁹ C10 = 0.255721 ×10⁻²¹ C12 = −0.495895 × 10⁻²⁴ C14 = 0.324678 × 10⁻²⁷ C16 = −0.103419 ×10⁻³⁰ C18 = 0.164243 × 10⁻³⁴ C20 = −0.104535 × 10⁻³⁸ Fourth Surface κ =0.000000 C4 = −0.217375 × 10⁻⁸ C6 = 0.385056 × 10⁻¹³ C8 = −0.347673 ×10⁻¹⁷ C10 = 0.186477 × 10⁻²¹ C12 = −0.244210 × 10⁻²⁶ C14 = −0.704052 ×10⁻³⁰ C16 = 0.833625 × 10⁻³⁴ C18 = −0.418438 × 10⁻³⁸ C20 = −0.792241 ×10⁻⁴³ Fifth Surface κ = 0.000000 C4 = −0.380907 × 10⁻¹⁰ C6 = −0.334201 ×10⁻¹⁵ C8 = 0.113527 × 10⁻¹⁹ C10 = −0.535935 × 10⁻²⁵ C12 = −0.416047 ×10⁻²⁹ C14 = 0.881874 × 10⁻³⁴ C16 = −0.583757 × 10⁻³⁹ C18 = −0.780811 ×10⁻⁴⁵ C20 = 0.176571 × 10⁻⁴⁹ Sixth Surface κ = 0.000000 C4 = −0.190330 ×10⁻⁸ C6 = 0.134021 × 10⁻¹¹ C8 = −0.471080 × 10⁻¹⁶ C10 = −0.968673 ×10⁻²⁰ C12 = 0.284390 × 10⁻²² C14 = −0.265057 × 10⁻²⁵ C16 = 0.131472 ×10⁻²⁸ C18 = −0.341329 × 10⁻³² C20 = 0.365714 × 10⁻³⁶ Seventh Surface κ =0.000000 C4 = 0.668635 × 10⁻¹⁰ C6 = 0.359674 × 10⁻¹⁵ C8 = 0.468613 ×10⁻²⁰ C10 = −0.440976 × 10⁻²⁴ C12 = 0.431536 × 10⁻²⁸ C14 = −0.257984 ×10⁻³² C16 = 0.938415 × 10⁻³⁷ C18 = −0.190247 × 10⁻⁴¹ C20 = 0.165315 ×10⁻⁴⁶

In the projection optical system PL of this embodiment, as an imagingregion in which each aberration is preferably corrected with respect toEUV light with a wavelength of 13.5 nm, an arc-shaped stationaryexposure region of 26 mm (=LX)×2 mm (=LY) is obtained on the wafer W.Therefore, on the wafer W, to each shot region having a size of, forexample, 26 mm (=LX)×33 mm (=LYo), a pattern of the mask M istransferred by scanning exposure.

That is, in the projection optical system PL of this embodiment, asshown in FIG. 4, an effective imaging region (stationary exposureregion) ER is limited to an arc-shaped region of 26 mm×2 mm, and aneffective image height is limited to a relatively narrow range of 26mm-31 mm (effective object height is 116 mm-124 mm). As describedbefore, this is because, in the reflective type projection opticalsystem PL of this embodiment, optical path separation has to beperformed so that the reflective surface does not shield the light to betransmitted.

In the projection optical system PL of this embodiment, as shown in FIG.4, the effective imaging region (stationary exposure region) ER islimited to an arc-shaped region of 26 mm×2 mm, and this is merely arather short arc-shaped region out of the entire circumference of theimage field IF. Therefore, if the aperture portion of the aperture stopAS is made to be a round shape, the numerical aperture NAm in themeridional direction and the numerical aperture NAs in the sagittaldirection, that is, the distortion direction and the distortion state ofthe aperture become substantially the same over the entire imagingregion as shown in FIG. 7. FIG. 7 shows the distortion degree of theaperture as an elliptical shape when the aperture portion is made to bea round shape.

Specifically, in the projection optical system PL of this embodiment,according to conventional technology, if the aperture portion of theaperture stop AS is set to be a round shape in which a diameter is68.348 mm, the following Table (2) shows the numerical aperture NAm inthe meridional direction and the numerical aperture NAs in the sagittaldirection of the imaging region at points of the respective imageheights. TABLE (2) NAm at point of image height 29 mm: 0.250765182507NAs at point of image height 29 mm: 0.258042961396 NAm at point of imageheight 31 mm: 0.249217797699 NAs at point of image height 31 mm:0.257476183744

Therefore, in this embodiment, by making the aperture portion of theaperture stop AS a predetermined shape other than a round shape, forexample, an elliptical shape, as shown in FIG. 8, the aperturedistortion can be suitably controlled over the entire imaging region,and the numerical aperture NAm in the meridional direction and thenumerical aperture NAs in the sagittal direction are constituted so asto be substantially the same over the entire imaging region. FIG. 8shows the aperture distortion degree in the heavy elliptical lines whenthe aperture portion is made to be an elliptical shape. Furthermore, thebroken elliptical lines in FIG. 8 correspond to elliptical lines of FIG.7 showing the aperture distortion degree when the aperture portion ismade to be a round shape. Specifically, in FIG. 8, on the right and leftends of the arc shape, the XY direction does not correspond to themeridional/sagittal directions. Thus, strictly speaking, NA does notbecome a round shape, but becomes a substantially elliptical shape.Thus, in the center, NA becomes a substantially uniform round shape, buton the right and left ends of the arc shape, strictly speaking, NAbecomes an non-uniform, non-round shape. However, even if NA does notbecome a completely round shape, an effect is obtained in which the NAdifference between the meridional direction and the sagittal direction(or NA difference between the X direction and the Y direction) can bemade small.

FIG. 9 shows an example showing an aperture portion of anelliptical-shaped aperture stop. In this figure, the diameter in the Ydirection of an aperture portion 10 of the aperture stop AS is a, andthe diameter in the X direction is b. In FIG. 9, a is larger than b.This is because the EUV exposure apparatus needs to minimize the numberof mirrors in order to suppress deterioration of the exposure lightamount as described above. Because of this, in general, the projectiverelationship becomes h>F sin θ, so as shown in FIG. 9, it is preferablethat the numerical aperture in the sagittal direction should be made tobe a shape that is relatively small. However, when the projectiverelationship becomes h<F sin θ, it is preferable that the value of aneeds to be made smaller than the value of b in FIG. 9. In addition,depending on the case, it is preferable that the shape of the aperturestop is determined upon considering optical characteristics such as asine condition, etc.

If the image height of effective light to be used for exposure islimited to a relatively narrow range, in the above-mentioned equations(6) and (7), even if a deviation amount δ from a desired projectiverelationship is large to some degree, non-uniformity due to the imageheight of the numerical aperture NA of the light reaching each point onthe image plane can be ignored. Therefore, if the image height of theeffective light to be used for exposure is limited to a relativelynarrow range, such as 29 mm through 31 mm, just like this embodiment,non-uniformity of the numerical aperture NA due to the image height alsocan be improved.

Specifically, in the projection optical system PL of this embodiment, asshown in FIG. 9, according to this invention, if the aperture portion 10of the aperture stop AS is set to be an elliptical shape such that thelong diameter (meridional direction) is 68.348 mm and the short diameter(sagittal direction) is 66.254 mm, the following Table (3) shows thenumerical aperture NAm in the meridional direction and the numericalaperture NAs in the sagittal direction in each image height of theimaging region. Furthermore, in FIG. 9, an auxiliary aperture portion 11is an aperture portion to transmit a predetermined light beam from themask M to the first reflective mirror M1, and an auxiliary apertureportion 12 is an aperture portion to transmit a predetermined light beamfrom the second reflective mirror M2 to the third reflective mirror M3.TABLE (3) NAm at point of image height 29 mm: 0.250765272746 NAs atpoint of image height 29 mm: 0.250272182607 NAm at point of image height31 mm: 0.249217758088 NAs at point of image height 31 mm: 0.24972074902

As shown in Table (2), by using this invention, the numerical apertureNA of 0.2507-0.2580, which is relatively significantly dispersed, atpoint of the image height 29 mm becomes 0.2507-0.2502, which is small,as shown in Table (3), and the dispersion can be suppressed toapproximately 1/15. In the same manner, by using this invention, thenumerical aperture NA of 0.2492-0.2574, which is relativelysignificantly dispersed, at point of the image height 31 mm becomes0.2492-0.2497, which is small, and the dispersion can be suppressed toapproximately 1/16. Thus, in the projection optical system PL of thisembodiment, the effective imaging region is limited to a relativelylong, thin arc-shaped region, and the effective image height is limitedto a relatively narrow range, so non-uniformity, due to the imageheight, of the numerical aperture NA of the light reaching each point onthe image plane can be minimized. Furthermore, in the projection opticalsystem PL of this embodiment, the aperture portion of the aperture stopAS is set to be a predetermined elliptical shape, so non-uniformity, dueto the direction, of the numerical aperture NA of the light reachingeach point on the image plane also can be minimized.

That is, in this embodiment, the projection optical system PL that is acatoptric system in which a field of view region and an imaging regionare located spaced from an optical axis can be accomplished in which thenumerical aperture of the light reaching each point on the image planeis substantially uniform regardless of the direction. Therefore, in theexposure apparatus of this embodiment, the reflective type projectionoptical system PL is used in which the numerical aperture of the lightreaching each point on the image plane is substantially uniformregardless of the direction, and EUV light is used as exposure light.Thus, a pattern on the mask M can be reliably formed on the wafer W at alarge resolution.

For example, in the projection optical system PL of this embodiment, thefollowing Table (4) shows a focal length F of a partial optical systemGR (M2-M6) arranged between the aperture stop AS and the wafer W (imageplane), and a function g (θ) that defines the projective relationship ofthe partial optical system GR (M2-M6). TABLE (4) F = −129.186524007 mm g(θ) = −1.089581416414470 × 10⁻⁸ + 9.983031116454740 × 10⁻¹ × θ−2.608569671543950 × 10⁻⁴ × θ2 + 1.693133763108080 × 10⁻¹ × θ3+3.272877426399590 × 10⁻¹ × θ4 − 1.064541314452320 × 10¹ × θ5+2.105681558275050 × 10² × θ6 − 1.964921359054180 × 10³ × θ7+9.263250785150350 × 10³ × θ8 − 2.172610074916260 × 10⁴ × θ9+2.026470680865160 × 10⁴ × θ10

If calculation is performed based on the parameter g (θ) shown in Table(4), the ratio between the numerical aperture NAs in the sagittaldirection and the numerical aperture NAm in the meridional direction ata point of the image height 29 mm, that is, NAs/Nam, has a value shownby the following equation (8).NAs/NAm={sin θ/g(θ)}/{cos θ/(dg(θ)/dθ)}=1.034204511394000  (8)

It is confirmed that the value shown by equation (8) is an actual valueof NAs/NAm, that is, the value is extremely close to 1.029022286, andthat in terms of the generation of the difference, depending on thedirection, of the numerical aperture NA at each image height of theimaging region, the factors of the third condition are dominant.Furthermore, in equation (8), it is desirable that the aperture portionof the aperture stop AS should be set in an elliptical shape in whichthe ratio between the long diameter and short diameter is tan θ: g(θ)/(d g (θ)/d θ).

FIG. 10 is a diagram showing a simulation result concerning effects thataperture distortion causes to imaging. In FIG. 10, the horizontal axisshows NA distortion (that is, distortion degree between the numericalaperture NAm in the meridional direction and the numerical aperture NAsin the sagittal direction), and the vertical axis shows errors ΔCD froma predetermined line width. In this simulation, the image side NA of theprojection optical system was 0.18, σ (coherence factor: exit sidenumerical aperture of the illumination optical system/incident sidenumerical aperture of the projection optical system) was 0.8, the lightwavelength λ was 13.5 nm, and an isolated line pattern mask was used inwhich the line width was 45 nm. A pattern in which the line width is 25nm was exposed on the wafer with higher dose.

Thus, the vertical axis ΔCD (nm) of FIG. 10 shows a line width errorfrom 25 nm that is a predetermined line width. In general, if 10% (25nm×0.1=2.5 nm in the case of this simulation) error occurs with respectto a pattern line width, it is understood that a semiconductorintegrated circuit becomes defective. In FIG. 10, several percentage ofNA distortion gives a serious effect as to whether a semiconductorintegrated circuit becomes defective.

With reference to FIG. 11, the following explains a preferable specificcondition of the aperture portion of the aperture stop AS to besatisfied. First, as shown in FIG. 11(a), a plurality of image points onthe arc-shaped imaging region (predetermined region) ER of the imageplane (second surface) of the projection optical system PL are definedas A1, A2, A3, . . . , An. Furthermore, one arbitrary image point amonga plurality of image points is defined as Ai. Here, a plurality of imagepoints are sampled a plurality of times at a substantially equalinterval on the arc-shaped imaging region ER of the image plane. In FIG.11(a), in order to simplify the explanation, only six image points A1-A6are shown.

Furthermore, as shown in FIG. 11(b), two coordinate axes x, yperpendicular to each other on a plane (XY plane) parallel to a planeincluding the aperture stop AS are established. On the aperture stopperiphery, the point at which the coordinate x is at a maximum isdefined as Pxu, the point at which the coordinate x is at a minimum isPxb, the point at which the coordinate y is at a maximum is Pyu, and thepoint at which the coordinate y is at a minimum is Pyb. Furthermore, thespherical surface Si of a radius 1 about the image point Ai isestablished, the coordinates at which the light going through the pointPxu and reaching the image point Ai crosses the spherical surface Si are(Xixu, Yixu), the coordinates at which the light going through the pointPxb and reaching the image point Ai crosses the spherical surface Si are(Xixb, Yixb), the coordinates at which the light going through the pointPyu and reaching the image point Ai crosses the spherical surface Si are(Xiyu, Yiyu), and the coordinates at which the light going through thepoint Pyb and reaching the image point Ai crosses the spherical surfaceSi are (Xiyb, Yiyb). Here, the directions of the X and Y axes in theaperture portion are defined so that the symbols of the X, Y coordinatesin the spherical surface Si matches the symbols of the X, Y coordinatesin the aperture portion.

Then, as two variables corresponding to the image point Ai, variablesNAxi and NAyi are introduced, which are defined by the followingequations (9) and (10), respectively.NAxi=(Xixu−Xixb)/2  (9)NAyi=(Yiyu−Yiyb)/2  (10)

Thus, in order to make the numerical aperture of the light reaching eachpoint on the arc-shaped imaging region ER on the image planesubstantially uniform regardless of the direction, it is preferable thata predetermined shape of the aperture portion of the aperture stop ASsubstantially satisfies the following equation (11). In equation (11),Σ(i=1˜n) is the summation of i=1 to i=n.{ΣNAxi(i=1˜n)}/n={ΣNAyi(i=1˜n)}/n  (11)

With reference to Tables (2) and (3), as described before, in theprojection optical system PL shown in FIG. 6, in a conventional exampleaccording to conventional technology, the aperture portion of theaperture stop AS has a round shape in which the diameter φ=68.348 mm. Inthis embodiment of this invention, the aperture portion of the aperturestop AS has an elliptical shape in which an X direction diameterφx=66.764 mm, and a Y direction diameter φy=68.348 mm. Hereafter, anevaluation example is shown, focusing on only six image points A1through A6, but this is to simplify the description. It is inherentlypreferable that many more image points are sampled on the arc-shapedimaging region ER of the image plane. The following Table (5) shows thecoordinates (X coordinate, Y coordinate) of six image points A1 throughA6 shown in FIG. 11(a). TABLE (5) A1 = (0, 29) A2 = (0, 31) A3 = (13,26.037) A4 = (13, 28.037) A5 = (−13, 26.037) A6 = (−13, 26.037)

Therefore, in the case of a conventional example, the following Table(6) shows the coordinates in which the light reaching the respectiveimage points A1 through A6 crosses the spherical surface Si, that isXixu, Xixb, Yiyu, Yiyb. TABLE (6) X1xu = 0.258042943154 X1xb =−0.258042943154 Y1yu = 0.256357547338 Y1yb = −0.245172818845 X2xu =0.257476143154 X2xb = −0.257476143154 Y2yu = 0.255819520205 Y2yb =−0.242616331396 X3xu = 0.259312007332 X3xb = −0.253769989674 Y3yu =0.257306651069 Y3yb = −0.246969026605 X4xu = 0.259077265506 X4xb =−0.252997085452 Y4yu = 0.256801648512 Y4yb = −0.244661464593 X5xu =0.253769989674 X5xb = −0.259312007332 Y5yu = 0.257306651069 Y5yb =−0.246969026606 X6xu = 0.252997085391 X6xb = −0.259077265493 Y6yu =0.256801650789 Y6yb = −0.244661462094

Meanwhile, in the case of this embodiment, the following Table (7) showsthe coordinates in which the light reaching the respective image pointsA1 through A6 crosses the spherical surface Si, that is, Xixu, Xixb,Yiyu, Yiyb. TABLE (7) X1xu = 0.252165810353 X1xb = −0.252165810353 Y1yu= 0.256357547323 Y1yb = −0.245172893708 X2xu = 0.25161071214 X2xb =−0.25161071214 Y2yu = 0.255819520205 Y2yb = −0.242616146657 X3xu =0.253346326274 X3xb = −0.248029134343 Y3yu = 0.257306648643 Y3yb =−0.246967652147 X4xu = 0.253123286675 X4xb = −0.247265493391 Y4yu =0.256801637468 Y4yb = −0.244660091297 X5xu = 0.248029134344 X5xb =−0.253346326274 Y5yu = 0.257306648643 Y5yb = −0.246967652148 X6xu =0.24726549333 X6xb = −0.253123286663 Y6yu = 0.256801639745 Y6yb =−0.244660088798

Thus, in the case of a conventional example, the following Table (8)shows {ΣNAxi(i=1˜n)}/n and {ΣNAyi (i=1˜n)}/n of equation (11).Furthermore, in the case of this embodiment, the following Table (9)shows {ΣNAxi(i=1˜n)}/n and {ΣNAyi(i=1˜n)}/n of equation (11). TABLE (8){Σ NAxi (i = 1˜n)}/n = 0.256779239 {Σ NAyi (i = 1˜n)}/n = 0.2509536499

TABLE (9) {Σ NAxi (i = 1˜n)}/n = 0.2509234605 {Σ NAyi (i = 1˜n)}/n =0.2509531806

In Tables (8) and (9), it is clear that this embodiment satisfiesequation (11) more preferably than a conventional example. As a result,in this embodiment according to this invention, a predetermined shape ofthe aperture portion of the aperture stop AS is set in an ellipticalshape so as to substantially satisfy equation (11). Thus, the numericalaperture of the light reaching each point on the arc-shaped imagingregion ER on the image plane can be substantially uniform regardless ofthe direction.

Incidentally, in a projection optical system mounted to a semiconductorpattern exposure apparatus, as an aperture stop, in the same manner as,for example, a camera stop, an iris diaphragm is normally used in whichan aperture diameter is variable. However, in this embodiment, forexample, when a deformed aperture portion such as an elliptical-shapedaperture portion is used, an iris diaphragm cannot be used as anaperture stop. Therefore, in this embodiment, when the numericalaperture NA of the projection optical system PL changes, it is desirablethat a structure is used which can be replaced with another aperturestop in a different aperture shape. Furthermore, the other aperture stopin a different aperture shape can instead be an aperture stop in asimilar shape.

In addition, in FIG. 6, in general, in a reflective type projectionoptical system in which a field of view region and an imaging region areformed spaced from an optical axis, an aperture stop is arranged in anextremely narrow space so that an effective light beam is not blocked.Additionally, when an ordinary aperture stop with a round-shapedaperture portion is used as well, instead of having a relatively complexmechanism in an aperture stop for the purpose of varying the aperturediameter, it is sometimes desirable that a structure is used that can bereplaced with another aperture stop in a different aperture shape.Furthermore, in the above-mentioned embodiments, a reflective typeprojection optical system is used, but the invention is not limited tothis, and the same operation effect as described in the above-mentionedembodiments can be obtained using a catadioptric projection opticalsystem.

In the exposure apparatus of the above-described embodiments, it ispossible to manufacture microdevices (semiconductor elements, imagepickup devices, liquid crystal display devices, thin film magneticheads, or the like) by illuminating (an illumination step) a mask by anillumination system, and exposing (an exposure step) a pattern fortransfer formed on the mask onto a photosensitive substrate, using aprojection optical system. With reference to the flowchart of FIG. 12,the following explains an example of a method of forming a predeterminedcircuit pattern on a wafer or the like as a photosensitive substrate,using the exposure device in the embodiments, when a semiconductordevice is obtained as a microdevice.

First, in step 301 of FIG. 12, a metal film is vapor deposited on onelot of wafers. Next, in step 302, a photoresist is applied to the metalfilm of the lot of wafers. After that, in step 303, using the exposureapparatus in the embodiments, the image of a pattern on a mask (reticle)is successively exposure transferred onto each shot region of the lot ofwafers via the projection optical system.

After that, in step 304, after the photoresist on the lot of wafers isdeveloped, the circuit pattern corresponding to the pattern on the maskis formed on each shot region on each wafer by etching, in step 305, theresist pattern serving as a mask on the lot of wafers. After that, adevice such as a semiconductor element or the like is manufactured byperforming circuit pattern formation or the like on successive layers.According to the above-described semiconductor device manufacturingmethod, it is possible to obtain, with good throughput, a semiconductordevice having a very detailed circuit pattern.

Additionally, in the above-described exemplary embodiments, a laserplasma light source is used as a light source for providing EUV light.However, this invention is not limited to this, and other appropriatelight sources for providing EUV light, for example, a synchrotronradiation (SOR) light source also can be used.

Furthermore, in the above-described embodiments, this invention isapplied to an exposure apparatus that has a light source for providingEUV light (X rays). However, this invention is not limited to this, andthis invention also can be applied to an exposure apparatus that has alight source that provides other wavelength light, other than EUV light.

In addition, in the above-described embodiments, this invention isapplied to a projection optical system of the exposure apparatus.However, this invention is not limited to this, and this invention alsocan be applied to general reflective type projection optical systems inwhich an image of a first plane (object plane) is formed in apredetermined region spaced from an optical axis at a second plane(image plane).

1. A projection exposure apparatus having an illumination optical systemfor illuminating a mask set at a first plane, a reflective typeprojection optical system for forming an image of a pattern formed onthe mask in an arc region spaced from an optical axis on aphotosensitive substrate set at a second plane, and a stage for holdingthe mask and the photosensitive substrate so as to be scanned, wherein:in the arc region, the width in the scan movement direction isrelatively narrow with respect to a width in a direction perpendicularto the scan movement direction; and the projection optical system isprovided with an aperture stop for defining a numerical aperture, and anaperture shape of the aperture stop has a first diameter in a directioncorresponding to the scan movement direction that is larger than asecond diameter in a direction corresponding to a directionperpendicular to the scan movement direction.
 2. The projection exposureapparatus as set forth in claim 1, wherein the shape of the aperturestop is an elliptical shape having a long diameter in a directioncorresponding to the scan movement direction.
 3. The projection exposureapparatus as set forth in claim 2, wherein the aperture stop isconstituted so as to be replaceable with another aperture different inshape or size.